POWER ELECTRONICS / INTERACTIVE LABUniversity of Vigo

Control and protection laboratory

Switch deliberately.
Protect the whole path.

From the logic command to the gate, and from stored energy to a controlled fault response. Change one condition, inspect the result, and explain the trade-off.

Interactive modelsGuided investigationsSelf-assessment with explanations

01 / EXPLORE AND UNDERSTAND

Control the gate charge, not only the logic level

Follow the source and sink paths. Separate gate behavior from the voltage and current in the power circuit.

Voltage control does not mean zero gate current. Source current changes the gate charge at turn-on; sink current removes it at turn-off. Once the voltage settles, the ideal insulated gate requires no DC current.

Source and sink: compare both transitions

Model scope. The linear equivalent capacitance C_eq represents the insulated gate. The two resistances include driver output resistance and the gate path. These are gate-voltage transitions, not predicted drain/collector switching times; Miller charge, parasitic inductance, leakage, and device current are not simulated. The waveform is the exact periodic state of this RC model. [1]

V
Drive voltage
nF
Equivalent gate capacitance C_eq
Ω
Turn-on path resistance
Ω
Turn-off path resistance
kHz
Switching frequency
%
Command duty cycle

Peak sourced current—
Peak sink magnitude—
Mean driver-supply power—Gate charging only
Minimum gate voltage—
Maximum gate voltage—
Isolated edges: rise / fall—10–90% / 90–10%

Why use a low output impedance?

In a complementary NPN/PNP totem pole, the NPN sources gate current and the PNP sinks it. A driver must support both directions. A larger turn-on impedance can moderate the edge without forcing the same change at turn-off. A diode-steered path or asymmetric feedback can make the two directions different; the detailed slew rate still depends on the power circuit.

iG = Ceq dvG,rel/dt
τon = RonCeq;  τoff = RoffCeq
Pdrive = fsVdriveCeq(vmax − vmin)

For a real device, use its gate-charge curves and operating conditions. The Miller plateau links gate charge to drain/collector voltage. Do not interpret VGS(th) as full enhancement, or assume the fastest possible turn-off is always safest: loop inductance can convert a rapid current fall into overvoltage.

An initial current boost is not a DC short circuit

Compare a step with and without C₁ in parallel with R₁. The gate is represented by Ceq = 5 nF; the drive step is 12 V. Both capacitors are initially discharged.

Ω
Source resistance Rₛ
Ω
Series resistance R₁
Ω
Gate-to-source shunt resistance R_GS
nF
Speed-up capacitance C₁
Initial gate-capacitor current—
Steady gate voltage—
External DC-divider current—
What do “initial” and “steady” mean here?
iG(0+) = Vdrive/Rs   (C₁ connected)
vGS(∞) = VdriveRGS/(Rs + R1 + RGS)

At the first instant, the initially uncharged C₁ bypasses R₁ and the gate voltage is zero, so R_GS carries zero current. That does not make either resistor irrelevant later. At DC both capacitors carry zero current, but R_GS draws an external divider current. This is not current through the gate oxide. With C₁ disconnected, the initial current is 12/(Rₛ + R₁).

Model scope. Exact linear two-capacitor step response; no Miller effect, driver current limit, or stray inductance. The added capacitor can change the entire transient, not just its first instant.

Technical references and model scope

The subject sequence covers gate drive, thyristor triggering, and the listed protection families. Numerical parameter sets are educational, not ratings of commercial devices. Additional reduced models and technical qualifications are labeled in their sections. The following optional primary references support those qualifications; only opening the links requires an Internet connection.

  1. Texas Instruments. Fundamentals of MOSFET and IGBT Gate Driver Circuits — SLUA618A Source/sink drive, gate charge, high-side references, and pulse-transformer reset.
  2. STMicroelectronics. Thyristors and TRIACs: latching current — AN303 Gate duration and the relationship between inductive current rise and latching.
  3. Nexperia. Designing RC snubbers — AN11160 Reduced RLC models, damping, parasitic energy, and the snubber loss trade-off.
  4. STMicroelectronics. TVS clamping protection mode — AN316 Working, breakdown, and clamping voltages; surge-source impedance and pulse power.
  5. Semikron Danfoss. Thyristor Triggering and Protection of Diodes and Thyristors — AN 18-002 Trigger circuits, pulse transformers, overvoltage protection, and overcurrent coordination.

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